- 您现在的位置：买卖IC网 > Sheet目录629 > MWI60-06G6K (IXYS)MOD IGBT SIX-PACK RBSOA E1
Diodes
Advanced Technical Information
MWI 60-06 G6K
Equivalent Circuits for Simulation
Symbol
Conditions
Maximum Ratings
Conduction
I F25
I F80
T C = 25°C
T C = 80°C
48
33
A
A
Symbol
Conditions
Characteristic Values
min. typ. max.
V F
I RM
t rr
I F = 30 A; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
I F = 30 A; di F /dt = -400 A/μs; T VJ = 100°C
V R = 300 V; V GE = 0 V
2.2
1.7
5
65
2.6
V
V
A
ns
IGBT (typ. at V GE = 15 V; T J = 125°C)
V 0 = 1.1 V; R 0 = 21.5 m ?
Free Wheeling Diode (typ. at T J = 125°C)
V 0 = 1.20 V; R 0 = 19 m ?
R thJC
R thCH
(per Diode)
0.3
0.9 K/W
K/W
Thermal Response
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min. typ. max.
R 25
B 25/85
T = 25°C
4.45
4.7
3510
5.0 k ?
K
IGBT (typ.)
Module
C th1 = tbd J/K; R th1 = tbd K/W
C th2 = tbd J/K; R th2 = tbd K/W
Symbol
Conditions
Maximum Ratings
Free Wheeling Diode (typ.)
T VJ
T VJM
T stg
V ISOL
M d
operating
I ISOL ≤ 1 mA; 50/60 Hz
Mounting torque (M4)
-40...+125
-40...+150
-40...+125
2500
2.0 - 2.2
° C
° C
° C
V~
Nm
C th1 = tbd J/K; R th1 = tbd K/W
C th2 = tbd J/K; R th2 = tbd K/W
Symbol
Conditions
Characteristic Values
Dimensions in mm (1 mm = 0.0394")
min. typ. max.
d S
d A
Weight
Creepage distance on surface
Strike distance in air
12.7
12.7
40
mm
mm
g
IXYS reserves the right to change limits, test conditions and dimensions.
? 2005 IXYS All rights reserved
2-2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MWI60-12T6K
MOD IGBT SIXPACK RBSOA 1200V E1
MWI75-06A7T
MOD IGBT SIXPACK RBSOA 600V E2
MWI75-12A8
MOD IGBT SIXPACK RBSOA 1200V E3
MWI75-12T7T
IGBT MOD TRENCH SIX-PACK E3
MWI75-12T8T
IGBT MOD TRENCH SIX-PACK E3
MWI80-12T6K
MOD IGBT SIXPACK RBSOA 1200V E1
N-66A
TRANS 250VA 115V 2.17A CHASIS MT
ND412026
DIODE MOD ISO DUAL 2000V 260A
相关代理商/技术参数
MWI60-12T6K
功能描述:分立半导体模块 60 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI75-06A7
功能描述:分立半导体模块 75 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI75-06A7T
功能描述:IGBT 模块 75 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
MWI75-12A5
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:IGBT Modules Sixpack
MWI75-12A8
功能描述:分立半导体模块 IGBT MOD 1200V, 75A RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI75-12A8T
功能描述:分立半导体模块 75 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI75-12E8
功能描述:分立半导体模块 75 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI75-12T7T
功能描述:分立半导体模块 75 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: